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SCTH35N65G2V-7

SCTH35N65G2V-7

SCTH35N65G2V-7

STMicroelectronics

SICFET N-CH 650V 45A H2PAK-7

compliant

SCTH35N65G2V-7 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $16.77000 $16.77
500 $16.6023 $8301.15
1000 $16.4346 $16434.6
1500 $16.2669 $24400.35
2000 $16.0992 $32198.4
2500 $15.9315 $39828.75
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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