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Name | Value |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 18 V |
Vgs (Max) | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 3315 pF @ 520 V |
FET Feature | - |
Power Dissipation (Max) | 360W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | H2PAK-7 |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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