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US6M11TR

US6M11TR

US6M11TR

Rohm Semiconductor

MOSFET N/P-CH 20V/12V TUMT6

compliant

US6M11TR Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.19530 -
6,000 $0.18270 -
15,000 $0.17640 -
836 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V, 12V
Current - Continuous Drain (Id) @ 25°C 1.5A, 1.3A
Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 10V
Power - Max 1W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Supplier Device Package TUMT6
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