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TT8U1TR

TT8U1TR

TT8U1TR

Rohm Semiconductor

MOSFET P-CH 20V 2.4A 8TSST

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TT8U1TR Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.26100 -
6,000 $0.25200 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 105mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSST
Package / Case 8-SMD, Flat Lead
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