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RZY200P01TL

RZY200P01TL

RZY200P01TL

Rohm Semiconductor

MOSFET P-CH 12V 20A TCPT3

non-compliant

RZY200P01TL Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.68600 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 20W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TCPT3
Package / Case 3-SMD, Flat Leads
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