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RV4E031RPHZGTCR1

RV4E031RPHZGTCR1

RV4E031RPHZGTCR1

Rohm Semiconductor

MOSFET P-CH 30V 3.1A DFN1616-6W

compliant

RV4E031RPHZGTCR1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.87000 $0.87
500 $0.8613 $430.65
1000 $0.8526 $852.6
1500 $0.8439 $1265.85
2000 $0.8352 $1670.4
2500 $0.8265 $2066.25
2960 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 105mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.8 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package DFN1616-6W
Package / Case 6-PowerWFDFN
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