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RT1A060APTR

RT1A060APTR

RT1A060APTR

Rohm Semiconductor

MOSFET P-CH 12V 6A 8TSST

compliant

RT1A060APTR Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.14415 -
6,000 $0.13485 -
15,000 $0.13020 -
66 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 19mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 4.5 V
Vgs (Max) -8V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 6 V
FET Feature -
Power Dissipation (Max) 600mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSST
Package / Case 8-SMD, Flat Lead
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