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RSJ650N10TL

RSJ650N10TL

RSJ650N10TL

Rohm Semiconductor

MOSFET N-CH 100V 65A LPTS

non-compliant

RSJ650N10TL Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $3.08000 -
675 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 65A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10780 pF @ 25 V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LPTS
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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