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RSD131P10TL

RSD131P10TL

RSD131P10TL

Rohm Semiconductor

MOSFET P-CH 100V 13A CPT3

compliant

RSD131P10TL Pricing & Ordering

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2,500 $0.53760 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 850mW (Ta), 20W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package CPT3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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