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RS6G120BGTB1

RS6G120BGTB1

RS6G120BGTB1

Rohm Semiconductor

NCH 40V 210A, HSOP8, POWER MOSFE

compliant

RS6G120BGTB1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.60000 $3.6
500 $3.564 $1782
1000 $3.528 $3528
1500 $3.492 $5238
2000 $3.456 $6912
2500 $3.42 $8550
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.34mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4240 pF @ 20 V
FET Feature -
Power Dissipation (Max) 104W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN
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