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RS1G180MNTB

RS1G180MNTB

RS1G180MNTB

Rohm Semiconductor

MOSFET N-CH 40V 18A/80A 8HSOP

non-compliant

RS1G180MNTB Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1293 pF @ 20 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 30W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN
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