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RS1E280GNTB

RS1E280GNTB

RS1E280GNTB

Rohm Semiconductor

MOSFET N-CH 30V 28A 8HSOP

compliant

RS1E280GNTB Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.35140 -
969 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 31W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN
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