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RQ7E055ATTCR

RQ7E055ATTCR

RQ7E055ATTCR

Rohm Semiconductor

MOSFET P-CH 30V 5.5A TSMT8

compliant

RQ7E055ATTCR Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.37940 -
7544 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24.5mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 18.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT8
Package / Case 8-SMD, Flat Lead
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