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Name | Value |
---|---|
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12 V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 105mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 6 V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSMT3 |
Package / Case | SC-96 |
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