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RQ3E180BNTB1

RQ3E180BNTB1

RQ3E180BNTB1

Rohm Semiconductor

NCH 30V 39A MIDDLE POWER MOSFET:

compliant

RQ3E180BNTB1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.68221 $0.68221
500 $0.6753879 $337.69395
1000 $0.6685658 $668.5658
1500 $0.6617437 $992.61555
2000 $0.6549216 $1309.8432
2500 $0.6480995 $1620.24875
3000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 20W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN
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