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RQ3E100BNTB1

RQ3E100BNTB1

RQ3E100BNTB1

Rohm Semiconductor

NCH 30V 21A POWER MOSFET: RQ3E10

compliant

RQ3E100BNTB1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.47432 $0.47432
500 $0.4695768 $234.7884
1000 $0.4648336 $464.8336
1500 $0.4600904 $690.1356
2000 $0.4553472 $910.6944
2500 $0.450604 $1126.51
3000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 15W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN
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