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RQ3E080BNTB

RQ3E080BNTB

RQ3E080BNTB

Rohm Semiconductor

MOSFET N-CH 30V 8A 8HSMT

compliant

RQ3E080BNTB Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.10620 -
6,000 $0.10030 -
15,000 $0.09145 -
30,000 $0.08555 -
75,000 $0.08260 -
24 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15.2mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN
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