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RQ1E070RPTR

RQ1E070RPTR

RQ1E070RPTR

Rohm Semiconductor

MOSFET P-CH 30V 7A TSMT8

non-compliant

RQ1E070RPTR Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.43960 -
4958 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 10 V
FET Feature -
Power Dissipation (Max) 550mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT8
Package / Case 8-SMD, Flat Lead
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