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RHU002N06T106

RHU002N06T106

RHU002N06T106

Rohm Semiconductor

MOSFET N-CH 60V 200MA UMT3

non-compliant

RHU002N06T106 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.06360 -
6,000 $0.05724 -
15,000 $0.05088 -
30,000 $0.04770 -
75,000 $0.04452 -
458 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15 pF @ 10 V
FET Feature -
Power Dissipation (Max) 200mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package UMT3
Package / Case SC-70, SOT-323
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