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RF4E080BNTR

RF4E080BNTR

RF4E080BNTR

Rohm Semiconductor

MOSFET N-CH 30V 8A HUML2020L8

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RF4E080BNTR Pricing & Ordering

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3,000 $0.23592 -
6,000 $0.22778 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17.6mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package HUML2020L8
Package / Case 8-PowerUDFN
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