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RD3S100CNTL1

RD3S100CNTL1

RD3S100CNTL1

Rohm Semiconductor

MOSFET N-CH 190V 10A TO252

compliant

RD3S100CNTL1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.88200 -
2024 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 190 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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