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R8001CND3FRATL

R8001CND3FRATL

R8001CND3FRATL

Rohm Semiconductor

MOSFET N-CH 800V 1A TO252

non-compliant

R8001CND3FRATL Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.56000 $2.56
500 $2.5344 $1267.2
1000 $2.5088 $2508.8
1500 $2.4832 $3724.8
2000 $2.4576 $4915.2
2500 $2.432 $6080
480 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.7Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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