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R6511KND3TL1

R6511KND3TL1

R6511KND3TL1

Rohm Semiconductor

HIGH-SPEED SWITCHING, NCH 650V 1

compliant

R6511KND3TL1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.40000 $2.4
500 $2.376 $1188
1000 $2.352 $2352
1500 $2.328 $3492
2000 $2.304 $4608
2500 $2.28 $5700
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 25 V
FET Feature -
Power Dissipation (Max) 124W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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