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R6509KND3TL1

R6509KND3TL1

R6509KND3TL1

Rohm Semiconductor

HIGH-SPEED SWITCHING, NCH 650V 9

compliant

R6509KND3TL1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.93000 $1.93
500 $1.9107 $955.35
1000 $1.8914 $1891.4
1500 $1.8721 $2808.15
2000 $1.8528 $3705.6
2500 $1.8335 $4583.75
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 585mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 25 V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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