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R6009ENXC7G

R6009ENXC7G

R6009ENXC7G

Rohm Semiconductor

600V 9A TO-220FM, LOW-NOISE POWE

compliant

R6009ENXC7G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.92000 $2.92
500 $2.8908 $1445.4
1000 $2.8616 $2861.6
1500 $2.8324 $4248.6
2000 $2.8032 $5606.4
2500 $2.774 $6935
1000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
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