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R6004JND3TL1

R6004JND3TL1

R6004JND3TL1

Rohm Semiconductor

MOSFET N-CH 600V 4A TO252

non-compliant

R6004JND3TL1 Pricing & Ordering

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2,500 $0.73402 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 1.43Ohm @ 2A, 15V
Vgs(th) (Max) @ Id 7V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 100 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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