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R6004END3TL1

R6004END3TL1

R6004END3TL1

Rohm Semiconductor

MOSFET N-CH 600V 4A TO252

compliant

R6004END3TL1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.65000 $1.65
500 $1.6335 $816.75
1000 $1.617 $1617
1500 $1.6005 $2400.75
2000 $1.584 $3168
2500 $1.5675 $3918.75
2415 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 980mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
FET Feature -
Power Dissipation (Max) 59W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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