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RQJ0303PGDQA#H6

RQJ0303PGDQA#H6

RQJ0303PGDQA#H6

MOSFET P-CH 30V 3.3A 3MPAK

compliant

RQJ0303PGDQA#H6 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Last Time Buy
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 68mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds 625 pF @ 10 V
FET Feature -
Power Dissipation (Max) 800mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-MPAK
Package / Case TO-236-3, SC-59, SOT-23-3
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