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RJK6025DPD-00#J2

RJK6025DPD-00#J2

RJK6025DPD-00#J2

MOSFET N-CH 600V 1A MP3A

non-compliant

RJK6025DPD-00#J2 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 17.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 37.5 pF @ 25 V
FET Feature -
Power Dissipation (Max) 29.7W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MP-3A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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