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RJK03E0DNS-00#J5

RJK03E0DNS-00#J5

RJK03E0DNS-00#J5

POWER FIELD-EFFECT TRANSISTOR

compliant

RJK03E0DNS-00#J5 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.87000 $0.87
500 $0.8613 $430.65
1000 $0.8526 $852.6
1500 $0.8439 $1265.85
2000 $0.8352 $1670.4
2500 $0.8265 $2066.25
140000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 15.2 nC @ 4.5 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 3050 pF @ 10 V
FET Feature -
Power Dissipation (Max) 20W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HWSON (3.3x3.3)
Package / Case 8-PowerWDFN
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