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NP100P06PDG-E1-AY

NP100P06PDG-E1-AY

NP100P06PDG-E1-AY

MOSFET P-CH 60V 100A TO263

compliant

NP100P06PDG-E1-AY Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.70000 $4.7
500 $4.653 $2326.5
1000 $4.606 $4606
1500 $4.559 $6838.5
2000 $4.512 $9024
2500 $4.465 $11162.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 200W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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