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NE5550779A-T1-A

  • NE5550779A-T1-A
  • NE5550779A-T1-A

NE5550779A-T1-A

NE5550779A-T1-A

Renesas Electronics America Inc

RF POWER N-CHANNEL, MOSFET

NE5550779A-T1-A Datasheet

non-compliant

NE5550779A-T1-A Pricing & Ordering

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Name Value
Product Status Obsolete
Transistor Type LDMOS
Frequency 900MHz
Gain 22dB
Voltage - Test 7.5 V
Current Rating (Amps) 2.1A
Noise Figure -
Current - Test 140 mA
Power - Output 38.5dBm
Voltage - Rated 30 V
Package / Case 4-SMD, Flat Leads
Supplier Device Package 79A
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