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RM6N800LD

RM6N800LD

RM6N800LD

Rectron USA

MOSFET N-CHANNEL 800V 6A TO252-2

compliant

RM6N800LD Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.70000 $0.7
500 $0.693 $346.5
1000 $0.686 $686
1500 $0.679 $1018.5
2000 $0.672 $1344
2500 $0.665 $1662.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 50 V
FET Feature -
Power Dissipation (Max) 98W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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