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RM4N650TI

RM4N650TI

RM4N650TI

Rectron USA

MOSFET N-CHANNEL 650V 4A TO220F

compliant

RM4N650TI Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.42000 $0.42
500 $0.4158 $207.9
1000 $0.4116 $411.6
1500 $0.4074 $611.1
2000 $0.4032 $806.4
2500 $0.399 $997.5
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 50 V
FET Feature -
Power Dissipation (Max) 28.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
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