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RM4N650LD

RM4N650LD

RM4N650LD

Rectron USA

MOSFET N-CHANNEL 650V 4A TO252-2

compliant

RM4N650LD Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.33000 $0.33
500 $0.3267 $163.35
1000 $0.3234 $323.4
1500 $0.3201 $480.15
2000 $0.3168 $633.6
2500 $0.3135 $783.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 50 V
FET Feature -
Power Dissipation (Max) 46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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