Welcome to ichome.com!

logo
Home

RM4N650IP

RM4N650IP

RM4N650IP

Rectron USA

MOSFET N-CHANNEL 650V 4A TO251

compliant

RM4N650IP Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.33000 $0.33
500 $0.3267 $163.35
1000 $0.3234 $323.4
1500 $0.3201 $480.15
2000 $0.3168 $633.6
2500 $0.3135 $783.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 50 V
FET Feature -
Power Dissipation (Max) 46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3 Stub Leads, IPak
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

STFW8N120K5
MTAJ30N06ELFK
MTAJ30N06ELFK
$0 $/piece
SI3437DV-T1-E3
STF17N80K5
2SK2731T146
RM40P40LD
RM40P40LD
$0 $/piece
FQP12P10
FQP12P10
$0 $/piece
STB7NK80Z-1

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.