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RM2N650IP

RM2N650IP

RM2N650IP

Rectron USA

MOSFET N-CHANNEL 650V 2A TO251

compliant

RM2N650IP Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.30000 $0.3
500 $0.297 $148.5
1000 $0.294 $294
1500 $0.291 $436.5
2000 $0.288 $576
2500 $0.285 $712.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 50 V
FET Feature -
Power Dissipation (Max) 23W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3 Stub Leads, IPak
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