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PJW3N10A_R2_00001

PJW3N10A_R2_00001

PJW3N10A_R2_00001

100V N-CHANNEL ENHANCEMENT MODE

compliant

PJW3N10A_R2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.45000 $0.45
500 $0.4455 $222.75
1000 $0.441 $441
1500 $0.4365 $654.75
2000 $0.432 $864
2500 $0.4275 $1068.75
4890 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 508 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
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