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PJW2P10A_R2_00001

PJW2P10A_R2_00001

PJW2P10A_R2_00001

100V P-CHANNEL ENHANCEMENT MODE

compliant

PJW2P10A_R2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.45000 $0.45
500 $0.4455 $222.75
1000 $0.441 $441
1500 $0.4365 $654.75
2000 $0.432 $864
2500 $0.4275 $1068.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 448 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
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