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PJQ1902_R1_00001

PJQ1902_R1_00001

PJQ1902_R1_00001

30V N-CHANNEL ENHANCEMENT MODE M

non-compliant

PJQ1902_R1_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.47000 $0.47
500 $0.4653 $232.65
1000 $0.4606 $460.6
1500 $0.4559 $683.85
2000 $0.4512 $902.4
2500 $0.4465 $1116.25
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.87 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 34 pF @ 15 V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-DFN (0.6x1)
Package / Case 3-UFDFN
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