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PJP4NA65H_T0_00001

PJP4NA65H_T0_00001

PJP4NA65H_T0_00001

650V N-CHANNEL MOSFET

compliant

PJP4NA65H_T0_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.91000 $0.91
500 $0.9009 $450.45
1000 $0.8918 $891.8
1500 $0.8827 $1324.05
2000 $0.8736 $1747.2
2500 $0.8645 $2161.25
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.1 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 423 pF @ 25 V
FET Feature -
Power Dissipation (Max) 44W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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