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PJD5P10A_L2_00001

PJD5P10A_L2_00001

PJD5P10A_L2_00001

100V P-CHANNEL ENHANCEMENT MODE

non-compliant

PJD5P10A_L2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.54000 $0.54
500 $0.5346 $267.3
1000 $0.5292 $529.2
1500 $0.5238 $785.7
2000 $0.5184 $1036.8
2500 $0.513 $1282.5
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta), 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 448 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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