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PJD4NA65H_L2_00001

PJD4NA65H_L2_00001

PJD4NA65H_L2_00001

650V N-CHANNEL MOSFET

compliant

PJD4NA65H_L2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.64000 $0.64
500 $0.6336 $316.8
1000 $0.6272 $627.2
1500 $0.6208 $931.2
2000 $0.6144 $1228.8
2500 $0.608 $1520
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.75Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.1 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 423 pF @ 25 V
FET Feature -
Power Dissipation (Max) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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