Welcome to ichome.com!

logo
Home

PJD4NA65_R2_00001

PJD4NA65_R2_00001

PJD4NA65_R2_00001

650V N-CHANNEL MOSFET

non-compliant

PJD4NA65_R2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.92000 $0.92
500 $0.9108 $455.4
1000 $0.9016 $901.6
1500 $0.8924 $1338.6
2000 $0.8832 $1766.4
2500 $0.874 $2185
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.4 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 463 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

FDB5800
FDB5800
$0 $/piece
NTMFS5C450NLT3G
NTMFS5C450NLT3G
$0 $/piece
IXFA10N80P-TRL
IXFA10N80P-TRL
$0 $/piece
FDW6923
RD3U080AAFRATL

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.