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PJD4NA60_R2_00001

PJD4NA60_R2_00001

PJD4NA60_R2_00001

600V N-CHANNEL MOSFET

non-compliant

PJD4NA60_R2_00001 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.93000 $0.93
500 $0.9207 $460.35
1000 $0.9114 $911.4
1500 $0.9021 $1353.15
2000 $0.8928 $1785.6
2500 $0.8835 $2208.75
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.1 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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