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PJD16N06A-AU_L2_000A1

PJD16N06A-AU_L2_000A1

PJD16N06A-AU_L2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

compliant

PJD16N06A-AU_L2_000A1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.78000 $0.78
500 $0.7722 $386.1
1000 $0.7644 $764.4
1500 $0.7566 $1134.9
2000 $0.7488 $1497.6
2500 $0.741 $1852.5
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 815 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 32.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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