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PJD100N04-AU_L2_000A1

PJD100N04-AU_L2_000A1

PJD100N04-AU_L2_000A1

40V N-CHANNEL ENHANCEMENT MODE M

non-compliant

PJD100N04-AU_L2_000A1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.76000 $1.76
500 $1.7424 $871.2
1000 $1.7248 $1724.8
1500 $1.7072 $2560.8
2000 $1.6896 $3379.2
2500 $1.672 $4180
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5214 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 83.3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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