Welcome to ichome.com!
| Name | Value |
|---|---|
| Product Status | Active |
| FET Type | 4 N-Channel |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 25A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 122.1nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1505pF @ 800V |
| Power - Max | 74W (Tj) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | 22-PIM (33.8x42.5) |
Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.