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NVTFS4C06NTWG

NVTFS4C06NTWG

NVTFS4C06NTWG

onsemi

MOSFET N-CH 30V 21A 8WDFN

non-compliant

NVTFS4C06NTWG Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1683 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 37W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN
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