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NVD4815NT4G

NVD4815NT4G

NVD4815NT4G

onsemi

MOSFET N-CH 30V 6.9A/35A DPAK-3

compliant

NVD4815NT4G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 12 V
FET Feature -
Power Dissipation (Max) 1.26W (Ta), 32.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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